US Patent Issued to SAMSUNG ELECTRONICS on April 15 for "Semiconductor device, including element isolation layer and nonvolatile memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,426, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device, including element isolation layer and nonvolatile memory device including the same" was invented by So Hyun Lee (Seoul, South Korea) and Kang-Oh Yun (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first active region and a second active region arranged along a first direction in a substrate, an element isolation layer extending in a second direction in the substrate to isolate the first active region and the second active region, a first gate electrode extending in the first d...