US Patent Issued to SAMSUNG ELECTRONICS on April 15 for "Page buffer circuit and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,995, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Page buffer circuit and memory device including the same" was invented by Jin-Young Chun (Suwon-si, South Korea), Minjae Seo (Suwon-si, South Korea) and Moosung Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes: a memory cell; a bit line connected to the memory cell; a first cross coupled inverter for storing data sensed from the memory cell through a sensing node connected to the bit line; a first transistor and a second transistor respectively connected to respective ends of the first cross coupled inve...