US Patent Issued to SAMSUNG ELECTRONICS on April 15 for "Non-volatile memory device with a conductive etch stop layer, method of manufacturing the same, and memory system including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,201, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Non-volatile memory device with a conductive etch stop layer, method of manufacturing the same, and memory system including the same" was invented by Moorym Choi (Yongin-si, South Korea) and Yunsun Jang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a non-volatile memory device including a first structure including a first substrate; a peripheral circuit; a first insulation structure; a plurality of first bonding pads; and a first interconnect structure; a second structure, which includes a conductive etch stop layer; a comm...