ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,438, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Magnetic memory devices" was invented by Han-Na Cho (Seongnam-si, South Korea), Bok-Yeon Won (Yongin-si, South Korea) and Oik Kwon (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a substrate including a cell region and a peripheral circuit region, lower contact plugs on the cell region, data storage structures on the lower contact plugs, and a peripheral interconnection structure on the peripheral circuit region. The peripheral interconnection structure includes a line portion extending in a direc...