ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,281, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"High electron mobility transistor" was invented by Sunkyu Hwang (Seoul, South Korea), Jaejoon Oh (Seongnam-si, South Korea) and Jongseob Kim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) includes an active region, in which a channel is formed, and a field region surrounding the active region. The HEMT may include a channel layer; a barrier layer on the channel layer and configured to induce a two-dimensional electron gas (2DEG) in the channel layer; a source and a drain on the barrier layer...