ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,710, issued on April 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device" was invented by Dukhyun Choe (Suwon-si, South Korea), Jinseong Heo (Seoul, South Korea), Taehwan Moon (Suwon-si, South Korea) and Sanghyun Jo (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a thin film structure, a semiconductor device including the thin film structure, and a semiconductor apparatus including the semiconductor device. The thin film structure includes a substrate, and a ferroelectric la...