US Patent Issued to SAMSUNG ELECTRONICS, UIF (University-Industry Foundation) Yonsei University on Feb. 10 for "Memory device using data strobe signal and method for compensating skew of data strobe signal thereof" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,611, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and UIF (University-Industry Foundation) Yonsei University (Seoul, South Korea).

"Memory device using data strobe signal and method for compensating skew of data strobe signal thereof" was invented by Byongmo Moon (Suwon-si, South Korea), Jeonghyeok You (Seoul, South Korea), Seong-Ook Jung (Seoul, South Korea), Ji Young Kim (Seoul, South Korea) and Hohyun Chae (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes core dies including memory cell arrays, and a buffer die electrically connected to the core dies through one ...