US Patent Issued to Samsung Electronics, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION on March 18 for "Field effect transistor including gate insulating layer formed of two-dimensional material" (South Korean Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,244, issued on March 18, was assigned to Samsung Electronics Co. Ltd (Gyeonggi-do, South Korea) and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Seoul, South Korea).

"Field effect transistor including gate insulating layer formed of two-dimensional material" was invented by Minhyun Lee (Suwon-si, South Korea), Minsu Seol (Suwon-si, South Korea), Ho Won Jang (Seoul, South Korea), Yeonchoo Cho (Suwon-si, South Korea) and Hyeonjin Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a fi...