US Patent Issued to SAMSUNG ELECTRONICS, Seoul National University R&DB Foundation on June 17 for "Magnetic memory using spin current, operating method thereof, and electronic apparatus including magnetic memory" (South Korean Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,126, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and Seoul National University R&DB Foundation (Seoul, South Korea).

"Magnetic memory using spin current, operating method thereof, and electronic apparatus including magnetic memory" was invented by Kwangseok Kim (Seoul, South Korea), Je-Geun Park (Seoul, South Korea), Kaixuan Zhang (Seoul, South Korea) and Jingyuan Cui (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a magnetic memory using a spin current, an operating method thereof, and/or an electronic apparatus including the magnetic memory. The magnetic memory includes...