US Patent Issued to SAMSUNG ELECTRONICS, Seoul National University R&DB Foundation on Dec. 16 for "Spiking neural network device, nonvolatile memory device, and operation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,943, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and Seoul National University R&DB Foundation (Seoul, South Korea).

"Spiking neural network device, nonvolatile memory device, and operation method thereof" was invented by Seunghwan Song (Suwon-si, South Korea), Byung-Gook Park (Seoul, South Korea) and Bosung Jeon (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spiking neural network device comprises at least one NAND cell string including a first NAND cell string that includes a string select transistor and a plurality of nonvolatile memory cells between a bit line and a ground select ...