US Patent Issued to SAMSUNG ELECTRONICS, RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on July 8 for "Bit line sense amplifier and bit line sensing method of semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,648, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon-si, South Korea).

"Bit line sense amplifier and bit line sensing method of semiconductor memory device" was invented by Chaehwan Park (Suwon-si, South Korea) and Keewon Kwon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bit line sense amplifier includes: a first inverter configured to receive an input signal from a bit line via an input terminal and output a first signal to a first node; a second inverter configured to receive the first signal and output a second signal...