US Patent Issued to SAMSUNG ELECTRONICS, RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on Jan. 20 for "Method of forming PN junction including transition metal dichalcogenide, method of fabricating semiconductor device using the same, and semiconductor device fabricated by the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,673, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon-si, South Korea).

"Method of forming PN junction including transition metal dichalcogenide, method of fabricating semiconductor device using the same, and semiconductor device fabricated by the same" was invented by Sang-Yong Park (Suwon-si, South Korea), Jin-Hyuk Kim (Suwon-si, South Korea), Jin-Hong Park (Suwon-si, South Korea) and Sejin Kyung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are methods of forming PN junction structures, methods of fabricating ...