US Patent Issued to SAMSUNG ELECTRONICS, National University of Singapore on Feb. 10 for "Semiconductor memory device with spin-orbit coupling channel" (Singaporean, South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,612, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea) and National University of Singapore (Singapore).

"Semiconductor memory device with spin-orbit coupling channel" was invented by Rahul Mishra (Singapore), Hyunsoo Yang (Singapore) and Ung Hwan Pi (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC chan...