ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,171, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea) and Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V. (Munich).

"Magnetic memory devices" was invented by Stuart Papworth Parkin (Halle, Germany), See-Hun Yang (Halle, Germany), Jiho Yoon (Halle, Germany) and Ung Hwan Pi (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower mag...