US Patent Issued to SAMSUNG ELECTRONICS, Korea University Research and Business Foundation on Nov. 25 for "Field programmable gate array device including spin orbit torque-magnetic random access memory and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,481,435, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and Korea University Research and Business Foundation (Seoul, South Korea).

"Field programmable gate array device including spin orbit torque-magnetic random access memory and operating method thereof" was invented by Jongsun Park (Seoul, South Korea), Dongsu Kim (Seoul, South Korea) and Seonggeon Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a field programmable gate array device including a plurality of lookup tables each storing data. Each lookup table includes a cell array including cells connected to a plural...