US Patent Issued to SAMSUNG ELECTRONICS, Korea Advanced Institute of Science and Technology on June 17 for "Semiconductor device having 3D stacked structure and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,182, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and Korea Advanced Institute of Science and Technology (Daejeon, South Korea).

"Semiconductor device having 3D stacked structure and method of manufacturing the same" was invented by Youngkwan Cha (Hwaseong-si, South Korea), Jaechul Park (Yongin-si, South Korea) and Sanghun Jeon (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are semiconductor devices having a three-dimensional stacked structure and methods of manufacturing the same. A semiconductor device includes a plurality of channel structures on a substrate and arranged i...