ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,193, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and Industry-Academic Cooperation Foundation, Yonsei University (Gyeongsangnam-do, South Korea).

"Memory device using a plurality of supply voltages and operating method thereof" was invented by Taemin Choi (Seoul, South Korea), Taehyun Kim (Suwon-si, South Korea) and Seongook Jung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device accessed by circuits operating based on a first supply voltage. The memory device includes a cell array electrically connected to a plurality of word lines and a plurality of bit lines; a row driv...