US Patent Issued to SAMSUNG ELECTRONICS, industry-Academic Cooperation Foundation, Yonsei University on Nov. 4 for "Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,054, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and industry-Academic Cooperation Foundation, Yonsei University (Seoul, South Korea).

"Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method" was invented by Mann Ho Cho (Seoul, South Korea) and Gi Hyeon Kwon (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a semiconductor layer, the semiconductor layer including a two-dimensional semiconductor material, forming a sacrificial layer on the semiconductor layer...