US Patent Issued to SAMSUNG ELECTRONICS, INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION on Sept. 16 for "Method and apparatus for filling gap using atomic layer deposition" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,079, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea) and INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION (Incheon, South Korea).

"Method and apparatus for filling gap using atomic layer deposition" was invented by Eunhyoung Cho (Suwon-si, South Korea), Sunghee Lee (Suwon-si, South Korea), Jeongyub Lee (Yongin-si, South Korea) and Han-Bo-Ram Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer on a side wall of ...