US Patent Issued to SAMSUNG ELECTRONICS, iBeam Materials on June 17 for "Single crystal semiconductor structure and method of fabricating the same" (South Korean, American Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,247, issued on June 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and iBeam Materials Inc. (Santa Fe, N.M.).

"Single crystal semiconductor structure and method of fabricating the same" was invented by Junhee Choi (Suwon-si, South Korea), Joohun Han (Hwaseong-si, South Korea) and Vladimir Matias (Santa Fe, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the...