US Patent Issued to SAMSUNG ELECTRO-MECHANICS on July 1 for "Multilayer capacitor having internal electrode with double bottleneck structure" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,619, issued on July 1, was assigned to SAMSUNG ELECTRO-MECHANICS Co. LTD. (Suwon-si, South Korea).

"Multilayer capacitor having internal electrode with double bottleneck structure" was invented by Jong Ho Lee (Suwon-si, South Korea), Myung Chan Son (Suwon-si, South Korea), Sim Chung Kang (Suwon-si, South Korea), Eun Jin Shim (Suwon-si, South Korea), Sun Hwa Kim (Suwon-si, South Korea) and Byung Soo Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayer capacitor includes a body including dielectric layers and internal electrodes and external electrodes disposed on an external surface of the body and connected to the in...