US Patent Issued to Samsung Display on Sept. 16 for "Double gate thin film transistor device with mixed semiconductor layers" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,157, issued on Sept. 16, was assigned to Samsung Display Co. Ltd. (Yongin-si, South Korea).

"Double gate thin film transistor device with mixed semiconductor layers" was invented by Tae-Young Choi (Seoul, South Korea), Seung-Hwan Cho (Yongin-si, South Korea) and Byoungtaek Son (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor may include an active layer including a first end area, a middle area adjacent to the first end area, and a second end area spaced from the first end area by the middle area, a first electrode on the active layer, overlapping the first end area, and connected to the first end area through a ...