ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,058, issued on May 20, was assigned to SAMSUNG DISPLAY Co. LTD. (Yongin-si, South Korea).
"Thin film transistor substrate" was invented by Iljeong Lee (Yongin-si, South Korea), Youngwoo Park (Yongin-si, South Korea) and Wangwoo Lee (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor substrate includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a channel region, a source region and a drain region. The thin film transistor further includes a gate electrode disposed on the semiconductor layer and that includes a lower surface and an upper surface. The thin ...