ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,223, issued on June 17, was assigned to SAMSUNG DISPLAY Co. LTD. (Yongin-si, South Korea).
"Thin film transistor and display device including the same" was invented by Joonseok Park (Yongin-si, South Korea), Jihun Lim (Yongin-si, South Korea), Myounghwa Kim (Yongin-si, South Korea), Taesang Kim (Yongin-si, South Korea) and Yeonkeon Moon (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer i...