ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,688, issued on Aug. 12, was assigned to Samsung Display Co. Ltd. (Yongin-si, South Korea).
"Gate driving circuit" was invented by Junhyun Park (Yongin-si, South Korea), Hyeongseok Kim (Yongin-si, South Korea), Heejean Park (Yongin-si, South Korea), Sunhwa Lee (Yongin-si, South Korea) and Mukyung Jeon (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A gate driving circuit is provided. Each stage of the gate driving circuit includes a first node controller configured to control a voltage level of a first node connected to a gate of a pull-down transistor, and a second node controller configured to control a voltage level of a sec...