US Patent Issued to SAMSUNG DISPLAY, POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on April 8 for "Thin film transistor comprising a low lead content halide anion perovskite and display device including the thin film transistor" (South Korean Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,108, issued on April 8, was assigned to SAMSUNG DISPLAY Co. LTD (Gyeonggi-Do, South Korea) and POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Gyeongsangbuk-Do, South Korea).

"Thin film transistor comprising a low lead content halide anion perovskite and display device including the thin film transistor" was invented by Jun Hyung Lim (Seoul, South Korea), Yong-Young Noh (Daejeon, South Korea), Soyoung Koo (Hwaseong-si, South Korea), Hyungjun Kim (Seoul, South Korea) and Huihui Zhu (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a gate electrode, an insulating layer disposed on the gate ele...