ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,063, issued on July 15, was assigned to S-Nanotech Co-Creation Co. Ltd. (Matsue, Japan).
"Photoelectric conversion device" was invented by Yasuhisa Fujita (Matsue, Japan), Kuninori Kitahara (Matsue, Japan) and Jie Lin (Matsue, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insula...