ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,399, issued on Sept. 30, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Kazunori Fuji (Kyoto, Japan) and Xiaopeng Wu (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating layer, a semiconductor element, a wiring layer and a sealing resin. The insulating layer includes obverse and reverse surfaces spaced apart in a thickness direction, and a penetrated part extending in the thickness direction. The semiconductor element, in contact with the obverse surface, includes an electrode corresponding to the penetrated ...