US Patent Issued to Rohm on Sept. 30 for "Gate driving circuit" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,896, issued on Sept. 30, was assigned to Rohm Co. Ltd. (Kyoto, Japan).

"Gate driving circuit" was invented by Tan Nhat Hoang (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate driving circuit (10X) is configured to be capable of driving a driving target transistor (QH) having a gate and a first terminal, and includes: an application terminal to which a negative voltage (VEE1) is applied; a driving transistor (MOS1) that has a control terminal fed with a control signal (MC1) and that is connected between the gate of the driving target transistor and the application terminal; and a bias switcher (101B) configured to feed the first te...