US Patent Issued to ROHM on Sept. 23 for "Semiconductor device including insulation gate-type transistors" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,303, issued on Sept. 23, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device including insulation gate-type transistors" was invented by Hajime Okuda (Kyoto, Japan), Yoshinori Fukuda (Kyoto, Japan), Toru Takuma (Kyoto, Japan), Shuntaro Takahashi (Kyoto, Japan) and Naoki Takahashi (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer, an insulation gate-type first transistor which is formed in the semiconductor layer, an insulation gate-type second transistor which is formed in the semiconductor layer, and a control wiring which is formed on the semiconductor layer such as ...