ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,655, issued on Oct. 7, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device with voltage resistant structure" was invented by Yuki Nakano (Kyoto, Japan) and Ryota Nakamura (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion, and a gate electrode buried in the gate trench via a gate insulating film, forming a channel at a portion lateral to the gate trench at ON-time, the ...