ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,634, issued on Oct. 7, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Shuhei Mitani (Kyoto, Japan), Yuki Nakano (Kyoto, Japan), Heiji Watanabe (Osaka, Japan), Takayoshi Shimura (Osaka, Japan), Takuji Hosoi (Osaka, Japan) and Takashi Kirino (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is f...