ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,263, issued on Oct. 14, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Nitride semiconductor device" was invented by Norikazu Ito (Kyoto, Japan), Taketoshi Tanaka (Kyoto, Japan) and Ken Nakahara (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes an electron transit layer, an electron supply layer that is formed on the electron transit layer, a gate layer that is formed on the electron supply layer and contains an Al1-XGaXN (0greater thanXgreater than1) based material containing a first impurity, a gate electrode that is formed on the gate layer and is in Schottky junction with the gate layer, and a s...