ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,788, issued on Nov. 18, was assigned to ROHM LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Minoru Nakagawa (Kyoto, Japan), Yuki Nakano (Kyoto, Japan), Masatoshi Aketa (Kyoto, Japan), Masaya Ueno (Kyoto, Japan), Seigo Mori (Kyoto, Japan) and Kenji Yamamoto (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench vi...