US Patent Issued to ROHM on Nov. 18 for "Method for manufacturing semiconductor device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,829, issued on Nov. 18, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Method for manufacturing semiconductor device and semiconductor device" was invented by Shingo Ota (Kyoto, Japan) and Jun Terada (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes a step of preparing a semiconductor substrate that has a first main surface on one side and a second main surface on the other side, the semiconductor substrate on which a plurality of device forming regions and an intended cutting line that demarcates the plurality of device forming regions are set, a step of forming a first electrode...