US Patent Issued to ROHM on Nov. 11 for "SiC semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,339, issued on Nov. 11, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"SiC semiconductor device" was invented by Masaya Ueno (Kyoto, Japan), Yuki Nakano (Kyoto, Japan), Sawa Haruyama (Kyoto, Japan), Yasuhiro Kawakami (Kyoto, Japan), Seiya Nakazawa (Kyoto, Japan) and Yasunori Kutsuma (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main s...