ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,704, issued on Nov. 11, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor power device and method for producing same" was invented by Yuki Nakano (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to co...