ALEXANDRIA, Va., June 17 -- United States Patent no. 12,313,659, issued on May 27, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"SIC semiconductor device with current sensing capability" was invented by Katsuhisa Nagao (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor device 1 includes a SiC semiconductor substrate, a source portion 27 including a principal-current-side unit cell 3...