ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,227, issued on March 18, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"SiC semiconductor device" was invented by Yuki Nakano (Kyoto, Japan), Masaya Ueno (Kyoto, Japan), Sawa Haruyama (Kyoto, Japan), Yasuhiro Kawakami (Kyoto, Japan), Seiya Nakazawa (Kyoto, Japan) and Yasunori Kutsuma (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface a...