US Patent Issued to ROHM on June 3 for "Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold" (Japanese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,683, issued on June 3, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold" was invented by Toshio Hanada (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to c...