ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,135, issued on June 24, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device comprising PN junction diode and Schottky barrier diode" was invented by Keiji Okumura (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device ...