ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,275, issued on June 17, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Kohei Shinsho (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, ...