ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,622, issued on July 29, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device with improved internal and external electrode structure" was invented by Hideaki Yanagida (Kyoto, Japan) and Yoshihisa Takada (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bo...