US Patent Issued to ROHM on July 22 for "Nitride semiconductor device and fabrication method therefor" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,346, issued on July 22, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Nitride semiconductor device and fabrication method therefor" was invented by Kenji Yamamoto (Kyoto, Japan), Tetsuya Fujiwara (Kyoto, Japan), Minoru Akutsu (Kyoto, Japan), Ken Nakahara (Kyoto, Japan) and Norikazu Ito (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes an electron transit layer that is formed of a nitride semiconductor, an electron supply layer that is formed on the electron transit layer, and formed of a nitride semiconductor and that has a recess which reaches the electron transit layer from a surface, a thermal o...