ALEXANDRIA, Va., July 3 -- United States Patent no. 12,348,220, issued on July 1, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Nitride semiconductor module" was invented by Hirotaka Otake (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor module includes a nitride semiconductor device, forming a transistor, and a control circuit. The nitride semiconductor device includes a control electrode arranged on a passivation layer between gate and drain electrodes. The control circuit generates first and second control voltages. The first control voltage, which shifts between a first voltage level and a lower second voltage level, controls a voltage applied between the gate and sou...