US Patent Issued to ROHM on Jan. 20 for "Semiconductor device including a silicon semiconductor layer and a nitride semiconductor layer" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,535, issued on Jan. 20, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device including a silicon semiconductor layer and a nitride semiconductor layer" was invented by Yuya Tamura (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an electron transit layer formed on first principal surface of the semiconductor layer, an electron supply layer formed on the electron transit layer, a gate conductive layer formed on the electron supply layer, a source conductive layer and a drain conductive layer that are formed on the electron supply layer such that the gate conductive layer is interposed between...