US Patent Issued to ROHM on Feb. 3 for "Semiconductor device having a junction portion contacting a Schottky metal" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,360, issued on Feb. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device having a junction portion contacting a Schottky metal" was invented by Yasuhiro Kawakami (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less t...