US Patent Issued to ROHM on Feb. 10 for "Nitride semiconductor device and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,356, issued on Feb. 10, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Nitride semiconductor device and method for manufacturing same" was invented by Hirotaka Otake (Kyoto, Japan), Kentaro Chikamatsu (Kyoto, Japan), Shinya Takado (Kyoto, Japan) and Kazuya Nagase (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device 1 includes a first nitride semiconductor layer 4 that constitutes an electron transit layer, a second nitride semiconductor layer 5 that is formed on the first nitride semiconductor layer and constitutes an electron supply layer, and a gate portion 20 that is formed on the second nitride semiconducto...