US Patent Issued to ROHM on Dec. 9 for "Semiconductor substrate, semiconductor device, and manufacturing methods of the same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,592, issued on Dec. 9, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor substrate, semiconductor device, and manufacturing methods of the same" was invented by Takuji Maekawa (Kyoto, Japan) and Mitsuru Morimoto (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer...