ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,969, issued on Dec. 30, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Yuki Nakano (Kyoto, Japan), Ryota Nakamura (Kyoto, Japan) and Katsuhisa Nagao (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a p...